Abstract
Lattice-matched and dislocation-free In0.29Al0.71As/In0.3Ga0.7As heterostructures with an improved Schottky barrier height have been realized on GaAs substrates. Through the temperature-dependent Hall effect as well as TEM analysis, the effectiveness of dislocation filtering have been verified. Based on the doped-channel approach, high current capability and high device performance were demonstrated for metamorphic doped-channel field effect transistors.
Original language | English |
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Pages (from-to) | 408-411 |
Number of pages | 4 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
State | Published - 1995 |
Event | Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 9 May 1995 → 13 May 1995 |