Lattice-matched In0.29Al0.71As/In0.3Ga0.7As doped-channel FETs

Ming Ta Yang, Yi Jen Chan, Jia Lin Shieh, Jen Inn Chyi

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Lattice-matched and dislocation-free In0.29Al0.71As/In0.3Ga0.7As heterostructures with an improved Schottky barrier height have been realized on GaAs substrates. Through the temperature-dependent Hall effect as well as TEM analysis, the effectiveness of dislocation filtering have been verified. Based on the doped-channel approach, high current capability and high device performance were demonstrated for metamorphic doped-channel field effect transistors.

Original languageEnglish
Pages (from-to)408-411
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 1995
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 9 May 199513 May 1995

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