Keyphrases
AlGaN-GaN
100%
Heterostructure
100%
Array of Channels
100%
AlInN
100%
Lattice Matching
100%
Double-channel
100%
MOS-HEMT
100%
Finned Channel
100%
Ga2O3
75%
Oxide Layer
50%
Gate Oxide
50%
Control Capability
50%
Gate Control
50%
Sidewall
25%
Cut-off Frequency
25%
Semiconductors
25%
Transconductance
25%
GaN Layers
25%
Low Noise
25%
Oscillation Frequency
25%
Electrical Field
25%
Gallium Oxide
25%
High-quality Interface
25%
Noise Spectral Density
25%
Vapor Cooling Condensation System
25%
Field Modulation
25%
Flicker Noise
25%
Laser Interference Photolithography System
25%
Double Hump
25%
Engineering
Oxide Layer
100%
Control Gate
100%
Metal Oxide Semiconductor
100%
Gate Oxide
100%
Side Wall
50%
Cutoff Frequency
50%
Power Density
50%
Noise Power
50%
Laser Interference Photolithography
50%
Condensation System
50%
Flicker Noise
50%
Electric Field
50%
Earth and Planetary Sciences
Low Noise
100%
High Electron Mobility Transistors
100%
Metal Oxide Semiconductor
100%
Photolithography
100%
Gallium Oxides
100%
Electric Field
100%
Transconductance
100%
Physics
High Electron Mobility Transistors
100%
Low Noise
100%
Condensation
100%
Metal Oxide Semiconductor
100%
Photolithography
100%
Electric Field
100%
Material Science
Oxide Compound
100%
Transistor
100%
Electron Mobility
100%
Metal Oxide
100%
Oxide Semiconductor
100%
Density
33%
Gallium
33%