Lateral self-aligned p-type in 2O 3 nanowire arrays epitaxially grown on Si substrates

C. L. Hsin, J. H. He, C. Y. Lee, W. W. Wu, P. H. Yeh, L. J. Chen, Z. L. Wang

Research output: Contribution to journalArticlepeer-review

63 Scopus citations


Lateral orientated growth of In 2O 3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In 2O 3 NWs and NRs were grown along [21̄1̄] in parallel to the Si ±[11̄0] and lying in the substrate plane. The electrical measurements show that the In 2O 3 NWs are p-type semiconductor. By N + doping, the resistivity of the In 2O 3 NWs has been tuned. The lateral self-aligned In 2O 3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.

Original languageEnglish
Pages (from-to)1799-1803
Number of pages5
JournalNano Letters
Issue number6
StatePublished - Jun 2007


Dive into the research topics of 'Lateral self-aligned p-type in <sub>2</sub>O <sub>3</sub> nanowire arrays epitaxially grown on Si substrates'. Together they form a unique fingerprint.

Cite this