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Lateral schottky GaN rectifiers formed by Si
+
ion implantation
Y. Irokawa
, Jihyun Kim
, F. Ren
, K. H. Baik
, B. P. Gila
, C. R. Abernathy
, S. J. Pearton
, C. C. Pan
, G. T. Chen
,
J. I. Chyi
Center for Advanced Science and Technology
Department of Electrical Engineering
Optical Sciences Center
Research output
:
Contribution to journal
›
Article
›
peer-review
3
Scopus citations
Overview
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ion implantation'. Together they form a unique fingerprint.
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Keyphrases
Schottky
100%
Rectifier
100%
Si Ion Implantation
100%
Lateral Schottky Diode
100%
Annealing
50%
Carrier Concentration
50%
Cm(III)
50%
P-GaN
50%
Annealing Time
50%
Si Ions
50%
Reverse Breakdown Voltage
50%
Subsequent Annealing
50%
Negative Temperature Coefficient
50%
Temperature 1
50%
Ion Dose
50%
Type Conversion
50%
Material Science
Silicon Ion
100%
Ion Implantation
100%
Annealing
66%
Schottky Diode
66%
Carrier Concentration
33%