@article{d4b837663a2543c59779475e493647ff,
title = "Lateral schottky GaN rectifiers formed by Si+ ion implantation",
abstract = "Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 1018 cm-3 for a moderate Si+ ion dose of ∼2 × 1014 cm-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.",
keywords = "GaN, Ion implantation, Lateral schottky diodes",
author = "Y. Irokawa and Jihyun Kim and F. Ren and Baik, {K. H.} and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.}",
note = "Funding Information: The work at the University of Florida is partially supported by EPRI and NSF. The work at the National Central University is partially supported by the Ministry of Education of the Republic of China under the Program for Promoting Academic Excellence of Universities (Grant No. 890E-FA06-1-4) and the National Science Council of the Republic of China (Grant No. NSC89-2215-E-008-031).",
year = "2004",
month = may,
doi = "10.1007/s11664-004-0196-5",
language = "???core.languages.en_GB???",
volume = "33",
pages = "426--430",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "5",
}