Lateral schottky GaN rectifiers formed by Si+ ion implantation

Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 1018 cm-3 for a moderate Si+ ion dose of ∼2 × 1014 cm-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.

Original languageEnglish
Pages (from-to)426-430
Number of pages5
JournalJournal of Electronic Materials
Issue number5
StatePublished - May 2004


  • GaN
  • Ion implantation
  • Lateral schottky diodes


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