Abstract
Magnesium-doped p-type GaN has been activated by irradiation with photons of 532 nm wavelength from the second harmonic of a Q-switched neodymium-doped ytterbium aluminum garnet (Nd:YAG) laser. With appropriate laser fluence levels and irradiation pulse numbers, such a laser-induced activation process resulted in a hole concentration about the same as that obtained through the conventional thermal activation technique. Temperature measurement revealed that the laser-induced process is very unlikely to be thermal. It was speculated that the process might involve the photon-induced breaking of the H-Mg bonds.
Original language | English |
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Pages (from-to) | 2143-2145 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 40 |
Issue number | 4 A |
DOIs | |
State | Published - Apr 2001 |
Keywords
- Laser-induced activation
- Mg-doped GaN
- P-type activation
- Thermal activation