Large-area few-layer MoS2 deposited by sputtering

Jyun Hong Huang; Hsing Hung Chen; Pang Shiuan Liu; Li Syuan Lu; Chien Ting Wu; Cheng Tung Chou; Yao Jen Lee; Lain Jong Li; Wen Hao Chang; Tuo Hung Hou

doi:10.1088/2053-1591/3/6/065007

Large-area few-layer MoS₂ deposited by sputtering

Jyun Hong Huang, Hsing Hung Chen, Pang Shiuan Liu, Li Syuan Lu, Chien Ting Wu, Cheng Tung Chou, Yao Jen Lee, Lain Jong Li, Wen Hao Chang, Tuo Hung Hou

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS₂ deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS₂ was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS₂ channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1^-1m with a trap charge density in grain boundaries of the order of 1013 cm^-2.

Original language	English
Article number	065007
Journal	Materials Research Express
Volume	3
Issue number	6
DOIs	https://doi.org/10.1088/2053-1591/3/6/065007
State	Published - Jun 2016

Keywords

MoS
Sputter
Transition metal dichalcogenide

Access to Document

10.1088/2053-1591/3/6/065007

Cite this

@article{58e26db9888c4dad8a05e588322f4923,

title = "Large-area few-layer MoS2 deposited by sputtering",

abstract = "Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1-1m with a trap charge density in grain boundaries of the order of 1013 cm-2.",

keywords = "MoS, Sputter, Transition metal dichalcogenide",

author = "Huang, {Jyun Hong} and Chen, {Hsing Hung} and Liu, {Pang Shiuan} and Lu, {Li Syuan} and Wu, {Chien Ting} and Chou, {Cheng Tung} and Lee, {Yao Jen} and Li, {Lain Jong} and Chang, {Wen Hao} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

month = jun,

doi = "10.1088/2053-1591/3/6/065007",

language = "???core.languages.en_GB???",

volume = "3",

journal = "Materials Research Express",

issn = "2053-1591",

number = "6",

}

TY - JOUR

T1 - Large-area few-layer MoS2 deposited by sputtering

AU - Huang, Jyun Hong

AU - Chen, Hsing Hung

AU - Liu, Pang Shiuan

AU - Lu, Li Syuan

AU - Wu, Chien Ting

AU - Chou, Cheng Tung

AU - Lee, Yao Jen

AU - Li, Lain Jong

AU - Chang, Wen Hao

AU - Hou, Tuo Hung

PY - 2016/6

Y1 - 2016/6

N2 - Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1-1m with a trap charge density in grain boundaries of the order of 1013 cm-2.

AB - Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1-1m with a trap charge density in grain boundaries of the order of 1013 cm-2.

KW - MoS

KW - Sputter

KW - Transition metal dichalcogenide

UR - http://www.scopus.com/inward/record.url?scp=84978372430&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/3/6/065007

DO - 10.1088/2053-1591/3/6/065007

M3 - 期刊論文

AN - SCOPUS:84978372430

SN - 2053-1591

VL - 3

JO - Materials Research Express

JF - Materials Research Express

IS - 6

M1 - 065007