Large-area few-layer MoS2 deposited by sputtering

Jyun Hong Huang, Hsing Hung Chen, Pang Shiuan Liu, Li Syuan Lu, Chien Ting Wu, Cheng Tung Chou, Yao Jen Lee, Lain Jong Li, Wen Hao Chang, Tuo Hung Hou

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33 Scopus citations

Abstract

Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1-1m with a trap charge density in grain boundaries of the order of 1013 cm-2.

Original languageEnglish
Article number065007
JournalMaterials Research Express
Volume3
Issue number6
DOIs
StatePublished - Jun 2016

Keywords

  • MoS
  • Sputter
  • Transition metal dichalcogenide

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