@inproceedings{42f575094fc6458090f57a2e3ddf229d,
title = "Ka-band wide-bandwidth voltage-controlled oscillators in InGaP-GaAs HBT technology",
abstract = "Monolithic wide-bandwidth low-phase-noise voltagecontrolled oscillators (VCOs) using 2-?m InGaP-GaAs heterojunction bipolar transistor (HBT) technology are presented in the paper. The tuning range of the VCOs are 28.0 to 34.0 GHz and 33.8 to 39.1 GHz, with a phase noise of -100.7 and - 103.8 dBc/Hz at 1-MHz offset from the carrier.The overall dc power consumption of the differential-output VCOs is 85 mW with a supply voltage of -2.5 V. The VCOs feature wide tuning range and low phase noise at the same time, with a figure of merit (FOM) of -176 and -171 dB. These are the first Ka-band VCOs with wide tuning bandwidth using commercial GaAs HBT process.",
author = "Chiong, {Chau Ching} and Chang, {Hong Yeh} and Chen, {Ming Tang}",
year = "2008",
doi = "10.1109/EMICC.2008.4772303",
language = "???core.languages.en_GB???",
isbn = "9782874870071",
series = "2008 European Microwave Integrated Circuit Conference, EuMIC 2008",
pages = "358--361",
booktitle = "2008 European Microwave Integrated Circuit Conference, EuMIC 2008",
note = "2008 European Microwave Integrated Circuit Conference, EuMIC 2008 ; Conference date: 27-10-2008 Through 31-10-2008",
}