Ka-band flip-chip assembled power amplifier

Chi Shien Lee; Wei Kuo Huang; Che Ming Wang; Yue Ming Hsin; Tsung Jung Yeh

doi:10.1109/APMC.2006.4429520

Ka-band flip-chip assembled power amplifier

Chi Shien Lee, Wei Kuo Huang, Che Ming Wang, Yue Ming Hsin, Tsung Jung Yeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we present a Ka-band two-stage power amplifier with flip-chip assembled 0.15 μm-gate pHEMTs. With characterized 0.15 μ-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMTs were flip-chip assembled on Al₂O₃ substrate where the passive components and coplanar waveguide (CPW) connection were designed and fabricated. The measured maximum S₂₁ at 38.56 GHz is 20.7 dB with bias conditions of V_D, = 3V, V_G1 = -0.2V, V_G2 = -0.15V, I_DI = 52mA, and I_D2 = 110mA. The output power at 38 GHz is larger than 15 dBm with linear gain of 15 dB. The load-pull measurement was also carried out on the amplifier to demonstrate the difference from 50Ω load measurement. The difference shows the capability of pHEMT model used at ka-band for delivering the maximum power.

Original language	English
Title of host publication	2006 Asia-Pacific Microwave Conference Proceedings, APMC
Pages	718-721
Number of pages	4
DOIs	https://doi.org/10.1109/APMC.2006.4429520
State	Published - 2006
Event	2006 Asia-Pacific Microwave Conference, APMC - Yokohama, Japan Duration: 12 Dec 2006 → 15 Dec 2006

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	2

Conference

Conference	2006 Asia-Pacific Microwave Conference, APMC
Country/Territory	Japan
City	Yokohama
Period	12/12/06 → 15/12/06

Keywords

Flip-chip
MIC
MMIC
Power amplifier
pHEMT

Access to Document

10.1109/APMC.2006.4429520

Cite this

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title = "Ka-band flip-chip assembled power amplifier",

abstract = "In this paper, we present a Ka-band two-stage power amplifier with flip-chip assembled 0.15 μm-gate pHEMTs. With characterized 0.15 μ-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMTs were flip-chip assembled on Al2O3 substrate where the passive components and coplanar waveguide (CPW) connection were designed and fabricated. The measured maximum S21 at 38.56 GHz is 20.7 dB with bias conditions of VD, = 3V, VG1 = -0.2V, VG2 = -0.15V, IDI = 52mA, and ID2 = 110mA. The output power at 38 GHz is larger than 15 dBm with linear gain of 15 dB. The load-pull measurement was also carried out on the amplifier to demonstrate the difference from 50Ω load measurement. The difference shows the capability of pHEMT model used at ka-band for delivering the maximum power.",

keywords = "Flip-chip, MIC, MMIC, Power amplifier, pHEMT",

author = "Lee, {Chi Shien} and Huang, {Wei Kuo} and Wang, {Che Ming} and Hsin, {Yue Ming} and Yeh, {Tsung Jung}",

year = "2006",

doi = "10.1109/APMC.2006.4429520",

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isbn = "4902339099",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

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note = "2006 Asia-Pacific Microwave Conference, APMC ; Conference date: 12-12-2006 Through 15-12-2006",

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AU - Lee, Chi Shien

AU - Huang, Wei Kuo

AU - Wang, Che Ming

AU - Hsin, Yue Ming

AU - Yeh, Tsung Jung

PY - 2006

Y1 - 2006

N2 - In this paper, we present a Ka-band two-stage power amplifier with flip-chip assembled 0.15 μm-gate pHEMTs. With characterized 0.15 μ-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMTs were flip-chip assembled on Al2O3 substrate where the passive components and coplanar waveguide (CPW) connection were designed and fabricated. The measured maximum S21 at 38.56 GHz is 20.7 dB with bias conditions of VD, = 3V, VG1 = -0.2V, VG2 = -0.15V, IDI = 52mA, and ID2 = 110mA. The output power at 38 GHz is larger than 15 dBm with linear gain of 15 dB. The load-pull measurement was also carried out on the amplifier to demonstrate the difference from 50Ω load measurement. The difference shows the capability of pHEMT model used at ka-band for delivering the maximum power.

AB - In this paper, we present a Ka-band two-stage power amplifier with flip-chip assembled 0.15 μm-gate pHEMTs. With characterized 0.15 μ-gate GaAs pHEMT and consideration of the Au-Sn pillar bump transition, the GaAs pHEMTs were flip-chip assembled on Al2O3 substrate where the passive components and coplanar waveguide (CPW) connection were designed and fabricated. The measured maximum S21 at 38.56 GHz is 20.7 dB with bias conditions of VD, = 3V, VG1 = -0.2V, VG2 = -0.15V, IDI = 52mA, and ID2 = 110mA. The output power at 38 GHz is larger than 15 dBm with linear gain of 15 dB. The load-pull measurement was also carried out on the amplifier to demonstrate the difference from 50Ω load measurement. The difference shows the capability of pHEMT model used at ka-band for delivering the maximum power.

KW - Flip-chip

KW - MIC

KW - MMIC

KW - Power amplifier

KW - pHEMT

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DO - 10.1109/APMC.2006.4429520

M3 - 會議論文篇章

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SN - 4902339099

SN - 9784902339093

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

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BT - 2006 Asia-Pacific Microwave Conference Proceedings, APMC

T2 - 2006 Asia-Pacific Microwave Conference, APMC

Y2 - 12 December 2006 through 15 December 2006

ER -

Ka-band flip-chip assembled power amplifier

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Keywords

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