Ion beam testing of ALTERA APEX FPGAs

M. Ceschia; M. Bellato; A. Paccagnella; A. Kaminski; S. C. Lee; C. Wan; M. Menichelli; A. Papi; J. Wyss

doi:10.1109/REDW.2002.1045531

Ion beam testing of ALTERA APEX FPGAs

M. Ceschia, M. Bellato, A. Paccagnella, A. Kaminski, S. C. Lee, C. Wan, M. Menichelli, A. Papi, J. Wyss

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

41 Scopus citations

Abstract

In this work we have studied the effects of heavy ion beam irradiation on a field programmable gate array (FPGA). We have essentially investigated the single event effects (SEE) induced by ions having linear energy transfer (LET) values between LET=1.6 MeV·cm²/mg and LET=78 MeV·cm²/mg. Our tests were performed on a device of the APEX family manufactured by Altera Corporation, featuring a SRAM-based configuration memory. The test methodology was based on the implementation of four shift registers (SRs), two of them using the triple-modular-redundant (TMR) technique. The functionality of this circuit was continuously checked during irradiation and every detected error was logged and time-stamped by a control system. Very few single event upsets have been detected in the SRs. On the contrary, we have recorded a large number of single event functional interrupts (SEFIs). SEFIs were induced by SEUs in the SRAM configuration memory. We observed a constant increase of the supply current during irradiation but this effect was not due to single event latch-ups, but to progressive SEU-induced driver contentions or cumulative micro latch-ups. The configuration memory cross section has been calculated from SEFI cross section.

Original language	English
Title of host publication	2002 IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	45-50
Number of pages	6
ISBN (Electronic)	0780375440
DOIs	https://doi.org/10.1109/REDW.2002.1045531
State	Published - 2002
Event	IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002 - Phoenix, United States Duration: 15 Jul 2002 → 19 Jul 2002

Publication series

Name	IEEE Radiation Effects Data Workshop
Volume	2002-January

Conference

Conference	IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002
Country/Territory	United States
City	Phoenix
Period	15/07/02 → 19/07/02

Keywords

Circuit testing
Control systems
Energy exchange
Error correction
Field programmable gate arrays
Ion beams
Manufacturing
Performance evaluation
Shift registers
Single event upset

Access to Document

10.1109/REDW.2002.1045531

Cite this

Ceschia, M., Bellato, M., Paccagnella, A., Kaminski, A., Lee, S. C., Wan, C., Menichelli, M., Papi, A., & Wyss, J. (2002). Ion beam testing of ALTERA APEX FPGAs. In 2002 IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002 (pp. 45-50). Article 1045531 (IEEE Radiation Effects Data Workshop; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/REDW.2002.1045531

@inproceedings{34fcccf7dab448a8bddf611e48357403,

title = "Ion beam testing of ALTERA APEX FPGAs",

abstract = "In this work we have studied the effects of heavy ion beam irradiation on a field programmable gate array (FPGA). We have essentially investigated the single event effects (SEE) induced by ions having linear energy transfer (LET) values between LET=1.6 MeV·cm2/mg and LET=78 MeV·cm2/mg. Our tests were performed on a device of the APEX family manufactured by Altera Corporation, featuring a SRAM-based configuration memory. The test methodology was based on the implementation of four shift registers (SRs), two of them using the triple-modular-redundant (TMR) technique. The functionality of this circuit was continuously checked during irradiation and every detected error was logged and time-stamped by a control system. Very few single event upsets have been detected in the SRs. On the contrary, we have recorded a large number of single event functional interrupts (SEFIs). SEFIs were induced by SEUs in the SRAM configuration memory. We observed a constant increase of the supply current during irradiation but this effect was not due to single event latch-ups, but to progressive SEU-induced driver contentions or cumulative micro latch-ups. The configuration memory cross section has been calculated from SEFI cross section.",

keywords = "Circuit testing, Control systems, Energy exchange, Error correction, Field programmable gate arrays, Ion beams, Manufacturing, Performance evaluation, Shift registers, Single event upset",

author = "M. Ceschia and M. Bellato and A. Paccagnella and A. Kaminski and Lee, {S. C.} and C. Wan and M. Menichelli and A. Papi and J. Wyss",

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year = "2002",

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series = "IEEE Radiation Effects Data Workshop",

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Ceschia, M, Bellato, M, Paccagnella, A, Kaminski, A, Lee, SC, Wan, C, Menichelli, M, Papi, A & Wyss, J 2002, Ion beam testing of ALTERA APEX FPGAs. in 2002 IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002., 1045531, IEEE Radiation Effects Data Workshop, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 45-50, IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002, Phoenix, United States, 15/07/02. https://doi.org/10.1109/REDW.2002.1045531

Ion beam testing of ALTERA APEX FPGAs. / Ceschia, M.; Bellato, M.; Paccagnella, A. et al.
2002 IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 45-50 1045531 (IEEE Radiation Effects Data Workshop; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ion beam testing of ALTERA APEX FPGAs

AU - Ceschia, M.

AU - Bellato, M.

AU - Paccagnella, A.

AU - Kaminski, A.

AU - Lee, S. C.

AU - Wan, C.

AU - Menichelli, M.

AU - Papi, A.

AU - Wyss, J.

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N2 - In this work we have studied the effects of heavy ion beam irradiation on a field programmable gate array (FPGA). We have essentially investigated the single event effects (SEE) induced by ions having linear energy transfer (LET) values between LET=1.6 MeV·cm2/mg and LET=78 MeV·cm2/mg. Our tests were performed on a device of the APEX family manufactured by Altera Corporation, featuring a SRAM-based configuration memory. The test methodology was based on the implementation of four shift registers (SRs), two of them using the triple-modular-redundant (TMR) technique. The functionality of this circuit was continuously checked during irradiation and every detected error was logged and time-stamped by a control system. Very few single event upsets have been detected in the SRs. On the contrary, we have recorded a large number of single event functional interrupts (SEFIs). SEFIs were induced by SEUs in the SRAM configuration memory. We observed a constant increase of the supply current during irradiation but this effect was not due to single event latch-ups, but to progressive SEU-induced driver contentions or cumulative micro latch-ups. The configuration memory cross section has been calculated from SEFI cross section.

AB - In this work we have studied the effects of heavy ion beam irradiation on a field programmable gate array (FPGA). We have essentially investigated the single event effects (SEE) induced by ions having linear energy transfer (LET) values between LET=1.6 MeV·cm2/mg and LET=78 MeV·cm2/mg. Our tests were performed on a device of the APEX family manufactured by Altera Corporation, featuring a SRAM-based configuration memory. The test methodology was based on the implementation of four shift registers (SRs), two of them using the triple-modular-redundant (TMR) technique. The functionality of this circuit was continuously checked during irradiation and every detected error was logged and time-stamped by a control system. Very few single event upsets have been detected in the SRs. On the contrary, we have recorded a large number of single event functional interrupts (SEFIs). SEFIs were induced by SEUs in the SRAM configuration memory. We observed a constant increase of the supply current during irradiation but this effect was not due to single event latch-ups, but to progressive SEU-induced driver contentions or cumulative micro latch-ups. The configuration memory cross section has been calculated from SEFI cross section.

KW - Circuit testing

KW - Control systems

KW - Energy exchange

KW - Error correction

KW - Field programmable gate arrays

KW - Ion beams

KW - Manufacturing

KW - Performance evaluation

KW - Shift registers

KW - Single event upset

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BT - 2002 IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002

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Ceschia M, Bellato M, Paccagnella A, Kaminski A, Lee SC, Wan C et al. Ion beam testing of ALTERA APEX FPGAs. In 2002 IEEE Radiation Effects Data Workshop, Held in conjunction with the IEEE Nuclear and Space Radiation Effects Conference, NSREC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 45-50. 1045531. (IEEE Radiation Effects Data Workshop). doi: 10.1109/REDW.2002.1045531

Ion beam testing of ALTERA APEX FPGAs

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