Investigation of thin TiO 2 films cosputtered with Si species

Jin Cherng Hsu, Cheng Chung Lee, Huang Lu Chen, Chien Cheng Kuo, Paul W. Wang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Titanium dioxide (TiO 2 ) films were fabricated by cosputtering titanium (Ti) target and SiO 2 or Si slice with ion-beam-sputtering deposition (IBSD) technique and were postannealed at 450 °C for 6 h. The variations of oxygen bonding, which included high-binding-energy oxygen (HBO), bridging oxygen (BO), low-binding-energy oxygen (LBO), and three chemical states of titanium (Ti 4+ , Ti 3+ and Ti 2+ ) were analyzed by X-ray photoelectron spectroscopy (XPS). The enhancement of HBO and reduction of BO in O 1s spectra as functions of SiO 2 or Si amount in cosputtered film imply the formation of Si-O-Ti linkage. Corresponding increase of Ti 3+ in Ti 2p spectra further confirmed the property modification of the cosputtered film resulting from the variation of the chemical bonding. An observed correlation between the chemical structure and optical properties, refractive index and extinction coefficient, of the SiO 2 or Si cosputtered films demonstrated that the change of chemical bonding in the film results in the modification of optical properties. Furthermore, it was found that the optical properties of the cosputtered films were strongly depended on the cosputtering targets. In case of the Si cosputtered films both the refractive indices and extinction coefficients were reduced after postannealing, however, the opposite trend was observed in SiO 2 cosputtered films.

Original languageEnglish
Pages (from-to)4852-4858
Number of pages7
JournalApplied Surface Science
Volume255
Issue number9
DOIs
StatePublished - 15 Feb 2009

Keywords

  • Bridging oxygen
  • Cosputtering
  • High-binding-energy oxygen
  • Ion-beam-sputtering deposition
  • Low-binding-energy oxygen
  • Titanium dioxide
  • X-ray photoelectron spectroscopy

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