Investigation of solid reaction between Fe and Si0.8Ge 0.2

Y. L. Chueh, S. L. Cheng, L. J. Chou

Research output: Contribution to journalArticlepeer-review

Abstract

Experimental investigation into the properties of the semiconductor, Fe(Si1-zGez), has revealed that it is the only phase presented after annealing at 650-950 °C. The Ge concentrations in Fe(Si1-zGez) increase at annealing temperatures of 650-750 °C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 °C because the Ge atoms were gradually expelled from Fe(Si1-zGez) to form the agglomerated Ge-rich Si1-yGey. Compared to the conventional Fe/Si reaction, the transformation of β-Fe(Si 1-zGez)2 was actually blocked by the presence of Ge in Fe(Si1-zGez).

Original languageEnglish
Pages (from-to)203-208
Number of pages6
JournalJournal of Crystal Growth
Volume281
Issue number2-4
DOIs
StatePublished - 1 Aug 2005

Keywords

  • A1. Nucleation barrier
  • A1. Nucleation control
  • B1. β-Fe(Si Ge)
  • B1. Fe
  • B1. Ge-rich Si Ge
  • B1. SiGe

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