Investigation of solid reaction between Fe and Si0.8Ge 0.2

Y. L. Chueh; S. L. Cheng; L. J. Chou

doi:10.1016/j.jcrysgro.2005.02.071

Investigation of solid reaction between Fe and Si_0.8Ge _0.2

Y. L. Chueh, S. L. Cheng, L. J. Chou

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Experimental investigation into the properties of the semiconductor, Fe(Si_1-zGe_z), has revealed that it is the only phase presented after annealing at 650-950 °C. The Ge concentrations in Fe(Si_1-zGe_z) increase at annealing temperatures of 650-750 °C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 °C because the Ge atoms were gradually expelled from Fe(Si_1-zGe_z) to form the agglomerated Ge-rich Si_1-yGe_y. Compared to the conventional Fe/Si reaction, the transformation of β-Fe(Si _1-zGe_z)₂ was actually blocked by the presence of Ge in Fe(Si_1-zGe_z).

Original language	English
Pages (from-to)	203-208
Number of pages	6
Journal	Journal of Crystal Growth
Volume	281
Issue number	2-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.02.071
State	Published - 1 Aug 2005

Keywords

A1. Nucleation barrier
A1. Nucleation control
B1. Fe
B1. Ge-rich Si Ge
B1. SiGe
B1. β-Fe(Si Ge)

Access to Document

10.1016/j.jcrysgro.2005.02.071

Cite this

@article{3e4a8b89353a437ab4d6752f4924059d,

title = "Investigation of solid reaction between Fe and Si0.8Ge 0.2",

abstract = "Experimental investigation into the properties of the semiconductor, Fe(Si1-zGez), has revealed that it is the only phase presented after annealing at 650-950 °C. The Ge concentrations in Fe(Si1-zGez) increase at annealing temperatures of 650-750 °C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 °C because the Ge atoms were gradually expelled from Fe(Si1-zGez) to form the agglomerated Ge-rich Si1-yGey. Compared to the conventional Fe/Si reaction, the transformation of β-Fe(Si 1-zGez)2 was actually blocked by the presence of Ge in Fe(Si1-zGez).",

keywords = "A1. Nucleation barrier, A1. Nucleation control, B1. Fe, B1. Ge-rich Si Ge, B1. SiGe, B1. β-Fe(Si Ge)",

author = "Chueh, {Y. L.} and Cheng, {S. L.} and Chou, {L. J.}",

note = "Funding Information: This research was supported by the National Science Council through Grant no. NSC 93-2215-E-007-024 and the Ministry of Education through Grant no. 93-I-0036-J4",

year = "2005",

month = aug,

day = "1",

doi = "10.1016/j.jcrysgro.2005.02.071",

language = "???core.languages.en_GB???",

volume = "281",

pages = "203--208",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "2-4",

}

TY - JOUR

T1 - Investigation of solid reaction between Fe and Si0.8Ge 0.2

AU - Chueh, Y. L.

AU - Cheng, S. L.

AU - Chou, L. J.

N1 - Funding Information: This research was supported by the National Science Council through Grant no. NSC 93-2215-E-007-024 and the Ministry of Education through Grant no. 93-I-0036-J4

PY - 2005/8/1

Y1 - 2005/8/1

N2 - Experimental investigation into the properties of the semiconductor, Fe(Si1-zGez), has revealed that it is the only phase presented after annealing at 650-950 °C. The Ge concentrations in Fe(Si1-zGez) increase at annealing temperatures of 650-750 °C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 °C because the Ge atoms were gradually expelled from Fe(Si1-zGez) to form the agglomerated Ge-rich Si1-yGey. Compared to the conventional Fe/Si reaction, the transformation of β-Fe(Si 1-zGez)2 was actually blocked by the presence of Ge in Fe(Si1-zGez).

AB - Experimental investigation into the properties of the semiconductor, Fe(Si1-zGez), has revealed that it is the only phase presented after annealing at 650-950 °C. The Ge concentrations in Fe(Si1-zGez) increase at annealing temperatures of 650-750 °C which may be due to the fact that the Ge atoms are more soluble in the FeSi phase. However, the Ge concentration decreased when annealing temperatures exceed 750 °C because the Ge atoms were gradually expelled from Fe(Si1-zGez) to form the agglomerated Ge-rich Si1-yGey. Compared to the conventional Fe/Si reaction, the transformation of β-Fe(Si 1-zGez)2 was actually blocked by the presence of Ge in Fe(Si1-zGez).

KW - A1. Nucleation barrier

KW - A1. Nucleation control

KW - B1. Fe

KW - B1. Ge-rich Si Ge

KW - B1. SiGe

KW - B1. β-Fe(Si Ge)

UR - http://www.scopus.com/inward/record.url?scp=22144468806&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.02.071

DO - 10.1016/j.jcrysgro.2005.02.071

M3 - 期刊論文

AN - SCOPUS:22144468806

SN - 0022-0248

VL - 281

SP - 203

EP - 208

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-4