Abstract
Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300°C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.
Original language | English |
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Pages (from-to) | 923-926 |
Number of pages | 4 |
Journal | IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control |
Volume | 52 |
Issue number | 5 |
DOIs | |
State | Published - May 2005 |