Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire

Hui Feng Lin, Chun Te Wu, Wei Cheng Chien, Sheng Wen Chen, Hui Ling Kao, Jen Inn Chyi, Jyh Shin Chen

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300°C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Original languageEnglish
Pages (from-to)923-926
Number of pages4
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume52
Issue number5
DOIs
StatePublished - May 2005

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