Investigation of intrinsic hydrogenated amorphous silicon (a-Si:H) thin films on textured silicon substrate with high quality passivation

Min Lun Yu, Yu Lin Hsieh, Sheng Kai Jou, Tomi T. Li, Chien Chieh Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the intrinsic hydrogenated amorphous silicon (a-Si:H) thin films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) was investigated for the application of the heterojunction silicon solar cell on the textured silicon substrate. During the process, we used the optical emission spectrometer (OES) and quadrupole mass spectrometry (QMS) to analyze the concentrations of free radicals in plasma. The results showed that the better surface recombination velocity (SRV) and passivation quality of a-Si:H thin films on the textured silicon substrate were obtained when the electrode distance at PECVD was 35mm. Furthermore, while the electrode distance was 35mm, the lowest electron temperature and the same spectrum ratio trend in OES (Si∗/SiH∗) and QMS (SiH2/SiH3) respectively were received.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2017, CSTIC 2017
EditorsSteve Liang, Ying Shi, Ru Huang, Qinghuang Lin, David Huang, Hanming Wu, Yuchun Wang, Cor Claeys, Kafai Lai, Ying Zhang, Peilin Song, Viyu Shi, Zhen Guo
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509066940
DOIs
StatePublished - 4 May 2017
Event2017 China Semiconductor Technology International Conference, CSTIC 2017 - Shanghai, China
Duration: 12 Mar 201713 Mar 2017

Publication series

NameChina Semiconductor Technology International Conference 2017, CSTIC 2017

Conference

Conference2017 China Semiconductor Technology International Conference, CSTIC 2017
Country/TerritoryChina
CityShanghai
Period12/03/1713/03/17

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