Investigation of interface quality and passivation improvement with a-SiO:H deposited by ECRCVD at low temperature

Keyphrases

• Low Temperature 100%
• Silane 100%
• Interface Quality 100%
• Interface Passivation 100%
• A-Si 66%
• Passivation Quality 66%
• Abrupt Interface 66%
• Surface Recombination Velocity 33%
• Epitaxial Growth 33%
• Optical Properties 33%
• Hydrogen Content 33%
• Absorption Coefficient 33%
• Transmission Electron Microscopy 33%
• Structural Properties 33%
• Optical Band Gap 33%
• Wide Bandgap 33%
• Partial Pressure of CO2 (pCO2) 33%
• Passivation 33%
• Hydrogenated Amorphous Silicon Nitride 33%
• C-Si 33%
• Hydrogenated Amorphous Silicon 33%
• High Transparency 33%
• Heterojunction Solar Cells 33%
• Passivation Materials 33%
• Optical Absorption Coefficient 33%

Material Science

• Carbon Dioxide 100%
• Film 40%
• Amorphous Silicon 40%
• Oxide Compound 20%
• Solar Cell 20%
• Optical Property 20%
• Transmission Electron Microscopy 20%
• Epitaxy 20%
• Heterojunction 20%
• Structural Property 20%
• Surface (Surface Science) 20%