Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer

Lin Jiang; Sheng S. Li; Nien Tze Yeh; Jen Inn Chyi; M. Z. Tidrow

doi:10.1049/el:20020904

Investigation of InAs/GaAs quantum-dot infrared photodetector with In_0.5Ga_0.5P dark current blocking layer

Lin Jiang, Sheng S. Li, Nien Tze Yeh, Jen Inn Chyi, M. Z. Tidrow

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A novel InAs/GaAs quantum-dot infrared photodetector with an In_0.5Ga_0.5P dark current blocking layer for long-wavelength infrared (LWIR) detection has been developed in this work. Very low dark current densities were obtained at V_b = - 0.5 V (10^-10 A/cm^-2) and V_b = +0.5 V (10^-11 A/cm^-2) at 77 K. The normal incident responsivity up to 90 K was observed in this device. The background limited performance (BLIP) detectivity (D*_BLIP) was found to be 3.36 × 10⁹ cm-Hz^1/2/W at λ_p = 12.2 μm with a corresponding responsivity of 55 mA/W at V_b = -1.7 V and T = 77 K.

Original language	English
Pages (from-to)	1374-1376
Number of pages	3
Journal	Electronics Letters
Volume	38
Issue number	22
DOIs	https://doi.org/10.1049/el:20020904
State	Published - 24 Oct 2002

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title = "Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer",

abstract = "A novel InAs/GaAs quantum-dot infrared photodetector with an In0.5Ga0.5P dark current blocking layer for long-wavelength infrared (LWIR) detection has been developed in this work. Very low dark current densities were obtained at Vb = - 0.5 V (10-10 A/cm-2) and Vb = +0.5 V (10-11 A/cm-2) at 77 K. The normal incident responsivity up to 90 K was observed in this device. The background limited performance (BLIP) detectivity (D*BLIP) was found to be 3.36 × 109 cm-Hz1/2/W at λp = 12.2 μm with a corresponding responsivity of 55 mA/W at Vb = -1.7 V and T = 77 K.",

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T1 - Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer

AU - Jiang, Lin

AU - Li, Sheng S.

AU - Yeh, Nien Tze

AU - Chyi, Jen Inn

AU - Tidrow, M. Z.

PY - 2002/10/24

Y1 - 2002/10/24

N2 - A novel InAs/GaAs quantum-dot infrared photodetector with an In0.5Ga0.5P dark current blocking layer for long-wavelength infrared (LWIR) detection has been developed in this work. Very low dark current densities were obtained at Vb = - 0.5 V (10-10 A/cm-2) and Vb = +0.5 V (10-11 A/cm-2) at 77 K. The normal incident responsivity up to 90 K was observed in this device. The background limited performance (BLIP) detectivity (D*BLIP) was found to be 3.36 × 109 cm-Hz1/2/W at λp = 12.2 μm with a corresponding responsivity of 55 mA/W at Vb = -1.7 V and T = 77 K.

AB - A novel InAs/GaAs quantum-dot infrared photodetector with an In0.5Ga0.5P dark current blocking layer for long-wavelength infrared (LWIR) detection has been developed in this work. Very low dark current densities were obtained at Vb = - 0.5 V (10-10 A/cm-2) and Vb = +0.5 V (10-11 A/cm-2) at 77 K. The normal incident responsivity up to 90 K was observed in this device. The background limited performance (BLIP) detectivity (D*BLIP) was found to be 3.36 × 109 cm-Hz1/2/W at λp = 12.2 μm with a corresponding responsivity of 55 mA/W at Vb = -1.7 V and T = 77 K.

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U2 - 10.1049/el:20020904

DO - 10.1049/el:20020904

M3 - 期刊論文

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SP - 1374

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 22

ER -

Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer

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Investigation of InAs/GaAs quantum-dot infrared photodetector with In_0.5Ga_0.5P dark current blocking layer