Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer

Lin Jiang, Sheng S. Li, Nien Tze Yeh, Jen Inn Chyi, M. Z. Tidrow

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A novel InAs/GaAs quantum-dot infrared photodetector with an In0.5Ga0.5P dark current blocking layer for long-wavelength infrared (LWIR) detection has been developed in this work. Very low dark current densities were obtained at Vb = - 0.5 V (10-10 A/cm-2) and Vb = +0.5 V (10-11 A/cm-2) at 77 K. The normal incident responsivity up to 90 K was observed in this device. The background limited performance (BLIP) detectivity (D*BLIP) was found to be 3.36 × 109 cm-Hz1/2/W at λp = 12.2 μm with a corresponding responsivity of 55 mA/W at Vb = -1.7 V and T = 77 K.

Original languageEnglish
Pages (from-to)1374-1376
Number of pages3
JournalElectronics Letters
Volume38
Issue number22
DOIs
StatePublished - 24 Oct 2002

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