Investigation of hydrogenated amorphous silicon as passivation layer by high density plasma

Keyphrases

• High-density Plasma 100%
• Passivation Layer 100%
• Passivation Quality 100%
• Hydrogenated Amorphous Silicon 100%
• Thermal Annealing 66%
• A-Si 66%
• P-type 33%
• Hydrogen Content 33%
• Electron Cyclotron Resonance Chemical Vapor Deposition 33%
• Spectroscopic Ellipsometry 33%
• Amorphous Phase 33%
• Cm(III) 33%
• Fourier Transform Infrared Spectrometer 33%
• Optical Emission Spectroscopy 33%
• Hydrogen Dilution Ratio 33%
• Single-side 33%
• Amorphous-to-crystalline Transition 33%
• Microstructure Parameters 33%
• Injection Level 33%
• Quasi-steady-state Photoconductance 33%
• Structure Quality 33%
• Side-polished 33%

Material Science

• Annealing 100%
• Film 100%
• Amorphous Silicon 100%
• Plasma Density 100%
• Thin Films 50%
• Chemical Vapor Deposition 50%
• Dilution 50%
• Emission Spectroscopy 50%