Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors

S. Y. Wang, C. A. Chang, C. M. Chang, S. H. Chen, F. Ren, S. J. Pearton, J. I. Chyi

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Abstract

The emitter size effect of a series InGaAsSb base series of InP/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) with different emitter sizes is investigated. Compared to the InGaAs base HBTs, these devices exhibit much lower base surface recombination current. This is attributed to the surface Fermi level pinning near the valence band of the antimonide base. The effect of Sb composition and doping concentration of the base on the surface recombination current is well explained by the postulate.

Original languageEnglish
Article number073507
JournalApplied Physics Letters
Volume101
Issue number7
DOIs
StatePublished - 13 Aug 2012

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