Investigation of deposition rate effects on the current-voltage characteristics of organic dynamic random access bistable devices

Tzu Yueh Chang; Szu Yuan Chen; Po Tsung Lee

doi:10.1889/1.2785274

Investigation of deposition rate effects on the current-voltage characteristics of organic dynamic random access bistable devices

Tzu Yueh Chang, Szu Yuan Chen, Po Tsung Lee

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We investigate organic dynamic random access bistable devices with Al/Alq₃/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we are able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.

Original language	English
Pages (from-to)	241-244
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	38
Issue number	1
DOIs	https://doi.org/10.1889/1.2785274
State	Published - 2007
Event	2007 SID International Symposium - Long Beach, CA, United States Duration: 23 May 2007 → 25 May 2007

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abstract = "We investigate organic dynamic random access bistable devices with Al/Alq3/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we are able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.",

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N2 - We investigate organic dynamic random access bistable devices with Al/Alq3/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we are able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.

AB - We investigate organic dynamic random access bistable devices with Al/Alq3/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we are able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.

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Y2 - 23 May 2007 through 25 May 2007

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Investigation of deposition rate effects on the current-voltage characteristics of organic dynamic random access bistable devices

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