TY - JOUR
T1 - Investigation of Cr- and Al-based metals for the reflector and Ohmic contact on n-GaN in GaN flip-chip light-emitting diodes
AU - Hsueh, Kuang Po
AU - Chiang, Kuo Chun
AU - Hsin, Yue Ming
AU - Wang, Charles J.
N1 - Funding Information:
The authors would like to thank the National Science Council of the Republic of China, Taiwan for financially supporting this research under Contract No. NSC 94-2215-E-008-005.
PY - 2006
Y1 - 2006
N2 - This letter investigates three composite metals used as a reflector and Ohmic contact on n-GaN to simplify the process in a flip-chip light-emitting diode (FCLED). The investigated composite metals were TiAlTiAu, CrAlCrAu, and CrTiAu. The specific contact resistivities of the TiAlTiAu, CrAlCrAu, and CrTiAu Ohmic contacts on n-GaN were changed from 1.4× 10-4, 1.7× 10-4, and 1.9× 10-4 cm2 to 1.3× 10-4, 1.1× 10-4, and 3.3× 10-5 cm2, respectively, after 500 h of thermal stress. The corresponding operating voltages of FCLEDs with different composite metals were changed by less than 1%. After 96 h of thermal stress, the luminous intensities of the three structures decreased by 6.2%, 11.1%, and 1.4%, respectively. The GaN FCLED that was fabricated with CrTiAu as a reflector and an Ohmic contact on n-GaN exhibits good thermal stability and luminous intensity.
AB - This letter investigates three composite metals used as a reflector and Ohmic contact on n-GaN to simplify the process in a flip-chip light-emitting diode (FCLED). The investigated composite metals were TiAlTiAu, CrAlCrAu, and CrTiAu. The specific contact resistivities of the TiAlTiAu, CrAlCrAu, and CrTiAu Ohmic contacts on n-GaN were changed from 1.4× 10-4, 1.7× 10-4, and 1.9× 10-4 cm2 to 1.3× 10-4, 1.1× 10-4, and 3.3× 10-5 cm2, respectively, after 500 h of thermal stress. The corresponding operating voltages of FCLEDs with different composite metals were changed by less than 1%. After 96 h of thermal stress, the luminous intensities of the three structures decreased by 6.2%, 11.1%, and 1.4%, respectively. The GaN FCLED that was fabricated with CrTiAu as a reflector and an Ohmic contact on n-GaN exhibits good thermal stability and luminous intensity.
UR - http://www.scopus.com/inward/record.url?scp=33750904313&partnerID=8YFLogxK
U2 - 10.1063/1.2387888
DO - 10.1063/1.2387888
M3 - 期刊論文
AN - SCOPUS:33750904313
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 19
M1 - 191122
ER -