Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes

Shih Cheng Chang; Yi Shan Lee

doi:10.23919/PS.2019.8817680

Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes

Shih Cheng Chang, Yi Shan Lee

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.

Original language	English
Title of host publication	OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784885523212
DOIs	https://doi.org/10.23919/PS.2019.8817680
State	Published - Jul 2019
Event	24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019 - Fukuoka, Japan Duration: 7 Jul 2019 → 11 Jul 2019

Publication series

Name	OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019

Conference

Conference	24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019
Country/Territory	Japan
City	Fukuoka
Period	7/07/19 → 11/07/19

Keywords

Photodetectors

Access to Document

10.23919/PS.2019.8817680

Developments and Applications of Ingaas/Inalas Single Photon Avalanche Diodes(2/3)
Lee, Y.
1/08/18 → 31/07/19
Project: Research

Cite this

Chang, S. C., & Lee, Y. S. (2019). Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. In OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019 Article 8817680 (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/PS.2019.8817680

Chang, Shih Cheng ; Lee, Yi Shan. / Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019).

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abstract = "We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.",

keywords = "Photodetectors",

author = "Chang, {Shih Cheng} and Lee, {Yi Shan}",

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Chang, SC & Lee, YS 2019, Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. in OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019., 8817680, OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019, Institute of Electrical and Electronics Engineers Inc., 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019, Fukuoka, Japan, 7/07/19. https://doi.org/10.23919/PS.2019.8817680

Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. / Chang, Shih Cheng; Lee, Yi Shan.
OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8817680 (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.

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PB - Institute of Electrical and Electronics Engineers Inc.

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Chang SC, Lee YS. Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes. In OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8817680. (OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019). doi: 10.23919/PS.2019.8817680

Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes

Abstract

Publication series

Conference

Keywords

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Projects

Developments and Applications of Ingaas/Inalas Single Photon Avalanche Diodes(2/3)

Cite this