Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes

Shih Cheng Chang, Yi Shan Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.

Original languageEnglish
Title of host publicationOECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523212
DOIs
StatePublished - Jul 2019
Event24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019 - Fukuoka, Japan
Duration: 7 Jul 201911 Jul 2019

Publication series

NameOECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019

Conference

Conference24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019
Country/TerritoryJapan
CityFukuoka
Period7/07/1911/07/19

Keywords

  • Photodetectors

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