Investigation of a-SiOx:H films as passivation layer in heterojunction interface

Che Hung Yeh, Yen Ho Chu, Chien Chieh Lee, Yu Lin Hsieh, Shian Ming Liu, Jenq Yang Chang, I. Chen Chen, Tomi T. Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate, (2) no electrode contamination, (3) low ion bombardment. The process parameters effect on a-SiOx:H thin films such as dilution ratio was investigated. In addition, this material will be applied to amorphous silicon / crystalline silicon heterojunction solar cells and improved the open-circuit voltage of solar cells.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2015, CSTIC 2015
EditorsCor Claeys, Qinghuang Lin, David Huang, Hanming Wu, Ru Huang, Kafei Lai, Ying Zhang, Beichao Zhang, Kuochun Wu, Larry Chen, Steve Liang, Peilin Song, Hsiang-Lan Lung, Dong Chen, Qi Wang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479972418
DOIs
StatePublished - 8 Jul 2015
Event2015 China Semiconductor Technology International Conference, CSTIC 2015 - Shanghai, China
Duration: 15 Mar 201516 Mar 2015

Publication series

NameChina Semiconductor Technology International Conference 2015, CSTIC 2015

Conference

Conference2015 China Semiconductor Technology International Conference, CSTIC 2015
Country/TerritoryChina
CityShanghai
Period15/03/1516/03/15

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