Investigation of a-Si:H films passivation quality by ECRCVD and application of silicon heterojunction solar cells

Keyphrases

• A-Si 100%
• Silicon Heterojunction Solar Cells 100%
• Passivation Quality 100%
• Intrinsic Layer 100%
• Hydrogen Dilution Ratio 100%
• High Growth Rate 50%
• VOCs 50%
• Growth Temperature 50%
• Conversion Efficiency 50%
• Active Area 50%
• Si Wafer 50%
• Silane 50%
• Good for 50%
• Passivation Layer 50%
• Antireflection Layer 50%
• Lifetime Measurement 50%
• C-Si 50%
• Effective Lifetime 50%
• Back Surface Field 50%
• HIT Solar Cell 50%
• Industry Production 50%
• Implied Open-circuit Voltage 50%

Engineering

• Heterojunctions 100%
• Passivation 100%
• Intrinsic Layer 100%
• Hydrogen Dilution 100%
• Solar Cell 100%
• Growth Temperature 50%
• Conversion Efficiency 50%
• Active Area 50%
• Open Circuit Voltage 50%
• Si Wafer 50%
• Passivation Layer 50%
• Back Surface 50%
• High Growth Rate 50%
• Surface Field 50%
• Effective Lifetime 50%
• Lifetime Measurement 50%

Material Science

• Silicon 100%
• Solar Cell 100%
• Film 100%
• Heterojunction 100%
• Dilution 100%
• Electronic Circuit 50%
• Indium Tin Oxide 50%
• Surface (Surface Science) 50%