@inproceedings{90ede17143c642a097913c9fe1146095,
title = "Investigation of a-Si:H films passivation quality by ECRCVD and application of silicon heterojunction solar cells",
abstract = "We investigated the quality of intrinsic layer by modulating the hydrogen dilution ratio (H2/SiH4) at various growth temperatures. The results of lifetime measurements indicate that a-Si:H intrinsic layer can successfully obtained the effective life time (∼446us) and the implied open circuit voltage (∼0.69 mV) under hydrogen dilution ratio (RH = 2) at 130°C even with high growth rate (>0.7 nm/s), that is good for industry production. The Voc increased about 28.3 and 32.2 mV with inserting a passivation layer (6 nm) on planar and texture c-Si wafer, respectively. Furthermore, with the addition of ITO as anti-reflection layer, we obtained that the conversion efficiency of texture HIT solar cell without back surface field (BSF) is 15.1% (active area = 0.783cm2) with V oc = 563 mV, Jsc = 36.7 mA, and FF = 73.1%.",
author = "Chu, {Yen Ho} and Lee, {Chien Chieh} and Chang, {Teng Hsiang} and Hsieh, {Yu Lin} and Chang, {Jenq Yang} and Tomi Li and Chen, {I. Chen}",
year = "2014",
doi = "10.1109/AM-FPD.2014.6867175",
language = "???core.languages.en_GB???",
isbn = "9784863483958",
series = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",
publisher = "IEEE Computer Society",
pages = "217--220",
booktitle = "Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices",
note = "21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 ; Conference date: 02-07-2014 Through 04-07-2014",
}