Investigation of a-Si:H films as passivation layer in heterojunction interface at low temperature

Yen Ho Chu, Chien Chieh Lee, Teng Hsiang Chang, Yu Lin Hsieh, Shian Ming Liu, Jenq Yang Chang, Tomi T. Li, I. Chen Chen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this study, hydrogenated amorphous silicon (a-Si:H) thin films that were deposited by the high density plasma electron cyclotron resonance chemical vapor deposition (ECRCVD) were used to study the passivation effect on the surface of c-Si substrate. We investigated the structural, optical, and passivation qualities of a-Si:H as a heterojunction interface by modulating the parameters of microwave power, substrate temperature, and post-deposition annealing. With increasing the microwave power leading to more dangling bonds, such that the longer lifetime and lower microstructure factor R* were demonstrated at 500W. When raising the substrate temperature, the hydrogen content (CH) will be decreased but the lifetime will be increased because this R* is a dominated factor. It indicates that exceeding 120°C in the substrate temperature has better absorption to the light. In addition, the postdeposition annealing of a-Si:H was an effective method to improve the minority carrier lifetime, and we can obtain better passivation with the carrier lifetime of 883μsec after 2 minutes annealing at 270°C.

Original languageEnglish
Pages (from-to)1245-1250
Number of pages6
JournalECS Transactions
Issue number1
StatePublished - 2014


Dive into the research topics of 'Investigation of a-Si:H films as passivation layer in heterojunction interface at low temperature'. Together they form a unique fingerprint.

Cite this