Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

Yi Chin Lin; Wei Chih Liu; Chia Lun Chang; Chao Chi Chung; Yan Hao Chen; Te Yuan Chung; Cheng Yi Liu

doi:10.1109/LPT.2014.2329857

Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

Yi Chin Lin, Wei Chih Liu, Chia Lun Chang, Chao Chi Chung, Yan Hao Chen, Te Yuan Chung, Cheng Yi Liu

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm². The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

Original language	English
Article number	6828707
Pages (from-to)	1793-1796
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	26
Issue number	18
DOIs	https://doi.org/10.1109/LPT.2014.2329857
State	Published - 15 Sep 2014

Keywords

GaN light-emitting diode (LED)
internal quantum efficiency
piezoelectric field
stress

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title = "Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED",

abstract = "By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm2. The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.",

keywords = "GaN light-emitting diode (LED), internal quantum efficiency, piezoelectric field, stress",

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T1 - Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

AU - Lin, Yi Chin

AU - Liu, Wei Chih

AU - Chang, Chia Lun

AU - Chung, Chao Chi

AU - Chen, Yan Hao

AU - Chung, Te Yuan

AU - Liu, Cheng Yi

PY - 2014/9/15

Y1 - 2014/9/15

N2 - By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm2. The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

AB - By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm2. The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

KW - GaN light-emitting diode (LED)

KW - internal quantum efficiency

KW - piezoelectric field

KW - stress

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DO - 10.1109/LPT.2014.2329857

M3 - 期刊論文

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VL - 26

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EP - 1796

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

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