Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

Yi Chin Lin, Wei Chih Liu, Chia Lun Chang, Chao Chi Chung, Yan Hao Chen, Te Yuan Chung, Cheng Yi Liu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm2. The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment.

Original languageEnglish
Article number6828707
Pages (from-to)1793-1796
Number of pages4
JournalIEEE Photonics Technology Letters
Volume26
Issue number18
DOIs
StatePublished - 15 Sep 2014

Keywords

  • GaN light-emitting diode (LED)
  • internal quantum efficiency
  • piezoelectric field
  • stress

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