Interfacial Stability in Bi2Te3Thermoelectric Joints

Chun Hsien Wang, Hsien Chien Hsieh, Zhen Wei Sun, V. K. Ranganayakulu, Tian Wey Lan, Yang Yuan Chen, Ying Yi Chang, Albert T. Wu

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

Bismuth telluride (Bi2Te3)-based thermoelectric materials are well-known for their high figure-of-merit (zT value) in the low-temperature region. Stable joints in the module are essential for creating a reliable device for long-term applications. This study used electroless Co-P to prevent a severe interfacial reaction between the joints of solder and Bi2Te3. A thick and brittle SnTe intermetallic compound layer was successfully inhibited. The strength of the joints improved, and the fracture mode became more ductile; furthermore, there was no significant degradation of thermoelectric properties after depositing the Co-P layer after long-term aging. The result suggests that electroless Co-P could enhance the interfacial stability of the joints and be an effective diffusion barrier for Bi2Te3 thermoelectric modules.

Original languageEnglish
Pages (from-to)27001-27009
Number of pages9
JournalACS Applied Materials and Interfaces
Volume12
Issue number24
DOIs
StatePublished - 17 Jun 2020

Keywords

  • BiTe
  • diffusion barrier
  • fracture mode
  • interfacial stability
  • shear strength
  • thermoelectric properties

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