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Abstract
Bismuth telluride (Bi2Te3)-based thermoelectric materials are well-known for their high figure-of-merit (zT value) in the low-temperature region. Stable joints in the module are essential for creating a reliable device for long-term applications. This study used electroless Co-P to prevent a severe interfacial reaction between the joints of solder and Bi2Te3. A thick and brittle SnTe intermetallic compound layer was successfully inhibited. The strength of the joints improved, and the fracture mode became more ductile; furthermore, there was no significant degradation of thermoelectric properties after depositing the Co-P layer after long-term aging. The result suggests that electroless Co-P could enhance the interfacial stability of the joints and be an effective diffusion barrier for Bi2Te3 thermoelectric modules.
Original language | English |
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Pages (from-to) | 27001-27009 |
Number of pages | 9 |
Journal | ACS Applied Materials and Interfaces |
Volume | 12 |
Issue number | 24 |
DOIs | |
State | Published - 17 Jun 2020 |
Keywords
- BiTe
- diffusion barrier
- fracture mode
- interfacial stability
- shear strength
- thermoelectric properties
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Dive into the research topics of 'Interfacial Stability in Bi2Te3Thermoelectric Joints'. Together they form a unique fingerprint.Projects
- 1 Finished
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The Effect of Interfacial Reaction in Metal Electrode on Thermoelectric Properties for Thin Film Thermoelectric Module(2/3)
Wu, T.-C. (PI)
1/08/19 → 31/07/20
Project: Research