Interfacial reactions of metal thin films on implanted channels under high current density

H. H. Lin, K. N. Chen, S. L. Cheng, Y. C. Peng, G. H. Shen, L. J. Chen, C. R. Chen

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Abstract

The interfacial reactions of metal on p+ and n+ channels under a high current density were investigated. A silicide line was found to form in the p+-Si channel and to initiate from the cathode contact. On the other hand, no silicide line formation in the n+-Si channel was observed. Network structures were observed in both Co and Ni samples. The depth of the silicide formation was found to extend to the junction depth. For Ni (or Co) contacts on p+-Si, the preferred failure at the negative contacts was attributed to electron-hole recombination. For Ni (or Co) contacts on n+-Si, failure at the positive contacts was controlled by a wear-out mechanism due to electromigration-assisted Ni (or Co) diffusion away from the Si.

Original languageEnglish
Pages (from-to)S264-S266
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
StatePublished - 1999

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