Abstract
High quality Y2O3 on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y2O3/GaSb and non-stoichiometric Sb2Ox (x<4) was found in the ALD-Y2O3/GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y2O3 provides lower interfacial trap density (Dit) grown at elevated temperature of 200°C, while ALD-grown Y2O3 shows smaller hysteresis and higher dielectric constant.
Original language | English |
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Pages (from-to) | 164-168 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 477 |
DOIs | |
State | Published - 1 Nov 2017 |
Keywords
- A3. Atomic layer deposition
- A3. Molecular beam epitaxy
- B1. Antimonides
- B2. Sb-based semiconductors