Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

Y. H. Lin, K. Y. Lin, W. J. Hsueh, L. B. Young, T. W. Chang, J. I. Chyi, T. W. Pi, J. Kwo, M. Hong

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2 Scopus citations

Abstract

High quality Y2O3 on GaSb was achieved using both molecular beam epitaxy (MBE) and atomic layer deposition (ALD) with interfacial characteristics studied by in-situ X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor (MOS) electrical measurements. Ga-oxide and stoichiometric Sb-oxides were obtained in the MBE-Y2O3/GaSb and non-stoichiometric Sb2Ox (x<4) was found in the ALD-Y2O3/GaSb according to the XPS spectra. From the capacitance-voltage (CV) measurements, MBE-Y2O3 provides lower interfacial trap density (Dit) grown at elevated temperature of 200°C, while ALD-grown Y2O3 shows smaller hysteresis and higher dielectric constant.

Original languageEnglish
Pages (from-to)164-168
Number of pages5
JournalJournal of Crystal Growth
Volume477
DOIs
StatePublished - 1 Nov 2017

Keywords

  • A3. Atomic layer deposition
  • A3. Molecular beam epitaxy
  • B1. Antimonides
  • B2. Sb-based semiconductors

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