Interdiffusion of in and Ga in InGaN/GaN multiple quantum wells

Chang Cheng Chuo; Chia Ming Lee; Jen Inn Chyi

doi:10.1063/1.1339991

Interdiffusion of in and Ga in InGaN/GaN multiple quantum wells

Chang Cheng Chuo, Chia Ming Lee, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

Thermal stability of In_xGa_1-xN/GaN multiple quantum wells with InN mole fraction of ∼0.23 and ∼0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing.

Original language	English
Pages (from-to)	314-316
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	3
DOIs	https://doi.org/10.1063/1.1339991
State	Published - 15 Jan 2001

Access to Document

10.1063/1.1339991

Cite this

@article{3aa451e413b0408283f54b97ab949459,

title = "Interdiffusion of in and Ga in InGaN/GaN multiple quantum wells",

abstract = "Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of ∼0.23 and ∼0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing.",

author = "Chuo, {Chang Cheng} and Lee, {Chia Ming} and Chyi, {Jen Inn}",

year = "2001",

month = jan,

day = "15",

doi = "10.1063/1.1339991",

language = "???core.languages.en_GB???",

volume = "78",

pages = "314--316",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "3",

}

TY - JOUR

T1 - Interdiffusion of in and Ga in InGaN/GaN multiple quantum wells

AU - Chuo, Chang Cheng

AU - Lee, Chia Ming

AU - Chyi, Jen Inn

PY - 2001/1/15

Y1 - 2001/1/15

N2 - Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of ∼0.23 and ∼0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing.

AB - Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of ∼0.23 and ∼0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing.

UR - http://www.scopus.com/inward/record.url?scp=0001645744&partnerID=8YFLogxK

U2 - 10.1063/1.1339991

DO - 10.1063/1.1339991

M3 - 期刊論文

AN - SCOPUS:0001645744

SN - 0003-6951

VL - 78

SP - 314

EP - 316

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Interdiffusion of in and Ga in InGaN/GaN multiple quantum wells

Abstract

Access to Document

Fingerprint

Cite this