Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity

Z. Pei, J. W. Shi, Y. M. Hsu, F. Yuan, C. S. Liang, C. W. Liu, T. M. Pan, S. C. Lu, W. Y. Hsieh, M. J. Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

SiGe phototransistors (HPT) with SiGe/Si multiple quantum well (MQW) absorption layers have been demonstrated to have high responsivity, GHz bandwidth and infrared (1.3 and 1.55 nm) detection ability, and can be used for gigabit optical communication applications [1]. To facilitate the integration with the following amplification circuitry, the SiGe/Si MQW absorption layers can be removed for the 850 nm wavelength detection. Moreover, the speed and avalanche responsivity are further enhanced by proper design of the non-ideal (nkT) base current, with a reasonable normal responsivity. The integrated photoreceiver using commercial SiGe/Si HBT foundry is feasible.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages18-19
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 10 Dec 200312 Dec 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
Country/TerritoryUnited States
CityWashington
Period10/12/0312/12/03

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