Insulator/GaN heterostructures of low interfacial density of states

M. Hong, H. M. Ng, J. Kwo, A. R. Kortan, J. N. Baillargeon, K. A. Anselm, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay, F. Ren, C. R. Abernathy, S. J. Pearton

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A review is given on insulators (oxides and nitrides) which have been deposited on GaN to form metal-insulator (oxides and nitrides)-semiconductor (MOS or MIS) diodes with a low interfacial density of states (Dit). These insulators include AlN, SiO2, Si3N4, SiO2/Ga2O3, and Ga2O3(Gd2O3). Techniques for depositing these insulators and methods for cleaning GaN surfaces prior to the insulator deposition are discussed. Recent progress on GaN MOSFET's (with SiO2/Ga2O3, and Ga2O3(Gd2O3) as gate dielectrics) and MISFET's (with AlN as a gate dielectric) is also reviewed. When exposed to room air, GaN surface is not as robust as previously thought. Therefore, preparation of a clean GaN surface for deposition of oxides and nitrides is necessary to achieve a low Dit. By heating GaN samples in UHV to clean the surfaces followed by deposition of Ga2O3(Gd2O3) and SiO2, we have achieved a low Dit with negligible hysteretic loops in the capacitance-voltage curves.

Original languageEnglish
Pages (from-to)T221-T2213
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2000


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