In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

Lin Jiang, Sheng S. Li, Nien Tze Yeh, Jen Inn Chyi, C. E. Ross, K. S. Jones

Research output: Contribution to journalArticlepeer-review

145 Scopus citations

Abstract

A high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector (QDIP) was presented. QDIP had a detection wave band of 6.7-11.5 μm and operating temperature of up to 260 K. The results showed that QDIP operated at high temperatures without using the large band gap material, as blocking barrier to reduce the device dark current.

Original languageEnglish
Pages (from-to)1986-1988
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number12
DOIs
StatePublished - 24 Mar 2003

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