In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMT with improved device reliability

C. S. Wu, Y. J. Chan, J. L. Shien, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A novel In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMT on InP substrate is proposed and fabricated. By adding 10% Ga to the InAlAs layer, the quality of this quaternary InAlGaAs can be improved. This HEMT demonstrated a peak gm of 295mS/mm, an fT of 35GHz, and an fmax of 76GHz with a gate length of 0.8 μm. Furthermore, after 36h of biasing stress, almost no change in drain current and transconductance was observed in the InAlGaAs HEMT, which is a better result than obtainable in conventional InP HEMTs.

Original languageEnglish
Pages (from-to)1105-1106
Number of pages2
JournalElectronics Letters
Volume31
Issue number13
DOIs
StatePublished - 22 Jun 1995

Keywords

  • High electron mobility transistors
  • Reliability

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