In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates

Chia Song Wu; Yi Jen Chan; Tien Huat Gan; Jia Lin Shieh; Jen Inn Chyi

In_0.52(Al_0.9Ga_0.1)_0.48As/In_0.53Ga_0.47As HEMTs on InP substrates

Chia Song Wu, Yi Jen Chan, Tien Huat Gan, Jia Lin Shieh, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.

Original language	English
Pages (from-to)	412-415
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1995
Event	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 9 May 1995 → 13 May 1995

Cite this

@article{e054bfde55084a67bd5de3d08e0025e3,

title = "In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates",

abstract = "InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.",

author = "Wu, {Chia Song} and Chan, {Yi Jen} and Gan, {Tien Huat} and Shieh, {Jia Lin} and Chyi, {Jen Inn}",

year = "1995",

language = "???core.languages.en_GB???",

pages = "412--415",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "null ; Conference date: 09-05-1995 Through 13-05-1995",

}

TY - JOUR

T1 - In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates

AU - Wu, Chia Song

AU - Chan, Yi Jen

AU - Gan, Tien Huat

AU - Shieh, Jia Lin

AU - Chyi, Jen Inn

PY - 1995

Y1 - 1995

N2 - InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.

AB - InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.

UR - http://www.scopus.com/inward/record.url?scp=0029234696&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0029234696

SP - 412

EP - 415

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

Y2 - 9 May 1995 through 13 May 1995

ER -

In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates

Abstract

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In_0.52(Al_0.9Ga_0.1)_0.48As/In_0.53Ga_0.47As HEMTs on InP substrates