In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMTs on InP substrates

Chia Song Wu, Yi Jen Chan, Tien Huat Gan, Jia Lin Shieh, Jen Inn Chyi

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

InAlGaAs/InGaAs quaternary high electron mobility transistors grown on InP substrates were fabricated and evaluated. The transistor performance was improved by adding Ga atoms into the InAlAs layers. The sidegating effect was also reduced. The device became more reliable by using the quaternary InAlGaAs as Schottky and buffer layers.

Original languageEnglish
Pages (from-to)412-415
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 1995
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 9 May 199513 May 1995

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