In0.52Al0.48As/In0.53Ga0.47As HEMT's on InP substrates

Chia Song Wu; Yi Jen Chan; Chu Dong Chen; Tien Huat Gan; Jen Inn Chyi

doi:10.1109/EDMS.1994.771298

In_0.52Al_0.48As/In_0.53Ga_0.47As HEMT's on InP substrates

Chia Song Wu, Yi Jen Chan, Chu Dong Chen, Tien Huat Gan, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In_0.52Al_0.4gAs/In_0.53Ga_0.47As high electron mobility transistor(HEMT) layer structure were grown by a Riber-32P MBE system on (100) InP.Fe substrates. Devices with 0.8 μ m gate-length demonstrated a peak extrinsic transconductance of 262 mS/mm at 300 K. A 25% g m enhancement was found, once devices were cooled down to 77 K. Microwave characteristics revealed a current gain cutoff frequency(f_T) of 28 GHz and a maximum oscillation frequency (f_max) of 48 GHz at 300 K.Bsed on the measured S-parameters (45MHz-50GHz), the equivalent circuit model of In_0.52Al_0.48As/In _0.53Ga_0.47As HEMT's was simulated which will be used for the future monolithic amplifier designs.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771298
State	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

Access to Document

10.1109/EDMS.1994.771298

Cite this

@conference{8c51a3d9ab1a4cabac8fd381d95d8829,

title = "In0.52Al0.48As/In0.53Ga0.47As HEMT's on InP substrates",

abstract = "In0.52Al0.4gAs/In0.53Ga0.47As high electron mobility transistor(HEMT) layer structure were grown by a Riber-32P MBE system on (100) InP.Fe substrates. Devices with 0.8 μ m gate-length demonstrated a peak extrinsic transconductance of 262 mS/mm at 300 K. A 25% g m enhancement was found, once devices were cooled down to 77 K. Microwave characteristics revealed a current gain cutoff frequency(fT) of 28 GHz and a maximum oscillation frequency (fmax) of 48 GHz at 300 K.Bsed on the measured S-parameters (45MHz-50GHz), the equivalent circuit model of In0.52Al0.48As/In 0.53Ga0.47As HEMT's was simulated which will be used for the future monolithic amplifier designs.",

author = "Wu, {Chia Song} and Chan, {Yi Jen} and Chen, {Chu Dong} and Gan, {Tien Huat} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771298",

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TY - CONF

T1 - In0.52Al0.48As/In0.53Ga0.47As HEMT's on InP substrates

AU - Wu, Chia Song

AU - Chan, Yi Jen

AU - Chen, Chu Dong

AU - Gan, Tien Huat

AU - Chyi, Jen Inn

PY - 1994

Y1 - 1994

N2 - In0.52Al0.4gAs/In0.53Ga0.47As high electron mobility transistor(HEMT) layer structure were grown by a Riber-32P MBE system on (100) InP.Fe substrates. Devices with 0.8 μ m gate-length demonstrated a peak extrinsic transconductance of 262 mS/mm at 300 K. A 25% g m enhancement was found, once devices were cooled down to 77 K. Microwave characteristics revealed a current gain cutoff frequency(fT) of 28 GHz and a maximum oscillation frequency (fmax) of 48 GHz at 300 K.Bsed on the measured S-parameters (45MHz-50GHz), the equivalent circuit model of In0.52Al0.48As/In 0.53Ga0.47As HEMT's was simulated which will be used for the future monolithic amplifier designs.

AB - In0.52Al0.4gAs/In0.53Ga0.47As high electron mobility transistor(HEMT) layer structure were grown by a Riber-32P MBE system on (100) InP.Fe substrates. Devices with 0.8 μ m gate-length demonstrated a peak extrinsic transconductance of 262 mS/mm at 300 K. A 25% g m enhancement was found, once devices were cooled down to 77 K. Microwave characteristics revealed a current gain cutoff frequency(fT) of 28 GHz and a maximum oscillation frequency (fmax) of 48 GHz at 300 K.Bsed on the measured S-parameters (45MHz-50GHz), the equivalent circuit model of In0.52Al0.48As/In 0.53Ga0.47As HEMT's was simulated which will be used for the future monolithic amplifier designs.

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U2 - 10.1109/EDMS.1994.771298

DO - 10.1109/EDMS.1994.771298

M3 - 會議論文

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T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994