In0.52Al0.48As/In0.53Ga0.47As HEMT's on InP substrates

Chia Song Wu, Yi Jen Chan, Chu Dong Chen, Tien Huat Gan, Jen Inn Chyi

Research output: Contribution to conferencePaperpeer-review


In0.52Al0.4gAs/In0.53Ga0.47As high electron mobility transistor(HEMT) layer structure were grown by a Riber-32P MBE system on (100) InP.Fe substrates. Devices with 0.8 μ m gate-length demonstrated a peak extrinsic transconductance of 262 mS/mm at 300 K. A 25% g m enhancement was found, once devices were cooled down to 77 K. Microwave characteristics revealed a current gain cutoff frequency(fT) of 28 GHz and a maximum oscillation frequency (fmax) of 48 GHz at 300 K.Bsed on the measured S-parameters (45MHz-50GHz), the equivalent circuit model of In0.52Al0.48As/In 0.53Ga0.47As HEMT's was simulated which will be used for the future monolithic amplifier designs.

Original languageEnglish
StatePublished - 1994
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 12 Jul 199415 Jul 1994


Conference1994 International Electron Devices and Materials Symposium, EDMS 1994


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