The unstrained or the so-called metamorphic In0.29AI0.71As/In0.3Ga0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (gm) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. Based on the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of fT=22 GHz and fmax=51 GHz have been obtained.
|State||Published - 1994|
|Event||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
Duration: 12 Jul 1994 → 15 Jul 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|Period||12/07/94 → 15/07/94|