In0.29al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

Yi Jen Chan; Ming Ta Yang; Chia Song Wu; Jen Inn Chyi

doi:10.1109/EDMS.1994.771266

In_0.29al_0.71As/In_0.3Ga_0.7As heterostructure field-effect transistors fabricated on GaAs substrates

Yi Jen Chan, Ming Ta Yang, Chia Song Wu, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The unstrained or the so-called metamorphic In_0.29AI_0.71As/In_0.3Ga_0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (g_m) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (f_T) of 23 GHz and a maximum available gain cut-off frequency (f_max) of 73 GHz. Based on the DCFETs, a g_m of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of f_T=22 GHz and f_max=51 GHz have been obtained.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771266
State	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

Access to Document

10.1109/EDMS.1994.771266

Cite this

@conference{5b5527f0aaf34d10966bddb0f67c62c4,

title = "In0.29al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates",

abstract = "The unstrained or the so-called metamorphic In0.29AI0.71As/In0.3Ga0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (gm) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. Based on the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of fT=22 GHz and fmax=51 GHz have been obtained.",

author = "Chan, {Yi Jen} and Yang, {Ming Ta} and Wu, {Chia Song} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771266",

language = "???core.languages.en_GB???",

}

TY - CONF

T1 - In0.29al0.71As/In0.3Ga0.7As heterostructure field-effect transistors fabricated on GaAs substrates

AU - Chan, Yi Jen

AU - Yang, Ming Ta

AU - Wu, Chia Song

AU - Chyi, Jen Inn

PY - 1994

Y1 - 1994

N2 - The unstrained or the so-called metamorphic In0.29AI0.71As/In0.3Ga0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (gm) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. Based on the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of fT=22 GHz and fmax=51 GHz have been obtained.

AB - The unstrained or the so-called metamorphic In0.29AI0.71As/In0.3Ga0.7As heterostructure FETs (HFETs), including HEMTs and DCFETs, have been fabricated on GaAs substrates by using a compositionally step-graded buffer design. A peak extrinsic DC transconductance (gm) of 230 mS/mm and saturation current density of 385 mA/mm were measured from a HEMTs device with 0.6 um-long gate length. This device also shows a current-gain cut-off frequence (fT) of 23 GHz and a maximum available gain cut-off frequency (fmax) of 73 GHz. Based on the DCFETs, a gm of 220 mS/mm and a full channel current of 400 mA/mm were achieved for a 1 um-long gate device. Also, the RF performance of fT=22 GHz and fmax=51 GHz have been obtained.

UR - http://www.scopus.com/inward/record.url?scp=85063570272&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771266

DO - 10.1109/EDMS.1994.771266

M3 - 會議論文

AN - SCOPUS:85063570272

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994