InP-based transverse junction light-emitting diodes for white-light generation at infrared wavelengths

J. W. Shi, T. J. Hung, Y. Y. Chen, Y. S. Wu, Wei Lin, Ying Jay Yang

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs which have different center wavelengths. The wide optical 3-dB bandwidth achieved (∼550 nm) is very stable and varies only negligibly with the bias current. For a bias current of 60 mA, a tremendously wide 3-dB optical bandwidth (580 nm, 1042 ∼ 1622 nm) has been demonstrated.

Original languageEnglish
Pages (from-to)2053-2055
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number19
DOIs
StatePublished - 1 Oct 2006

Keywords

  • Light-emitting diodes (LEDs)
  • Semiconductor optical amplifiers (SOAs)

Fingerprint

Dive into the research topics of 'InP-based transverse junction light-emitting diodes for white-light generation at infrared wavelengths'. Together they form a unique fingerprint.

Cite this