Inhibition effect of a laser on thickness increase of p-type porous silicon in electrochemical anodizing

C. C. Chiang; P. C. Juan; T. H. Lee

doi:10.1149/2.0851603jes

Inhibition effect of a laser on thickness increase of p-type porous silicon in electrochemical anodizing

C. C. Chiang, P. C. Juan, T. H. Lee

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We demonstrate that the thickness increase of the porous layer on p-type (1-10 ohm-cm) silicon can be inhibited from hundreds to several nm/min in regular anodizing by exposure to He-Ne laser irradiation. During 2.0 mW laser irradiation, the growth in thickness was reduced to 5-6 nm/minute by anodizing with a current density of 10 mA/cm2. The inhibition effect on the thickness increase of porous silicon depends significantly on the laser power during a fixed anodizing time.

Original language	English
Pages (from-to)	H265-H268
Journal	Journal of the Electrochemical Society
Volume	163
Issue number	5
DOIs	https://doi.org/10.1149/2.0851603jes
State	Published - 2016

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abstract = "We demonstrate that the thickness increase of the porous layer on p-type (1-10 ohm-cm) silicon can be inhibited from hundreds to several nm/min in regular anodizing by exposure to He-Ne laser irradiation. During 2.0 mW laser irradiation, the growth in thickness was reduced to 5-6 nm/minute by anodizing with a current density of 10 mA/cm2. The inhibition effect on the thickness increase of porous silicon depends significantly on the laser power during a fixed anodizing time.",

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AU - Lee, T. H.

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N2 - We demonstrate that the thickness increase of the porous layer on p-type (1-10 ohm-cm) silicon can be inhibited from hundreds to several nm/min in regular anodizing by exposure to He-Ne laser irradiation. During 2.0 mW laser irradiation, the growth in thickness was reduced to 5-6 nm/minute by anodizing with a current density of 10 mA/cm2. The inhibition effect on the thickness increase of porous silicon depends significantly on the laser power during a fixed anodizing time.

AB - We demonstrate that the thickness increase of the porous layer on p-type (1-10 ohm-cm) silicon can be inhibited from hundreds to several nm/min in regular anodizing by exposure to He-Ne laser irradiation. During 2.0 mW laser irradiation, the growth in thickness was reduced to 5-6 nm/minute by anodizing with a current density of 10 mA/cm2. The inhibition effect on the thickness increase of porous silicon depends significantly on the laser power during a fixed anodizing time.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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ER -

Inhibition effect of a laser on thickness increase of p-type porous silicon in electrochemical anodizing

Abstract

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