Inhibition effect of a laser on thickness increase of p-type porous silicon in electrochemical anodizing

C. C. Chiang, P. C. Juan, T. H. Lee

Research output: Contribution to journalArticlepeer-review

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Abstract

We demonstrate that the thickness increase of the porous layer on p-type (1-10 ohm-cm) silicon can be inhibited from hundreds to several nm/min in regular anodizing by exposure to He-Ne laser irradiation. During 2.0 mW laser irradiation, the growth in thickness was reduced to 5-6 nm/minute by anodizing with a current density of 10 mA/cm2. The inhibition effect on the thickness increase of porous silicon depends significantly on the laser power during a fixed anodizing time.

Original languageEnglish
Pages (from-to)H265-H268
JournalJournal of the Electrochemical Society
Volume163
Issue number5
DOIs
StatePublished - 2016

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