InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

Han Chieh Ho; Zong Yan Gao; Heng Kuang Lin; Pei Chin Chiu; Yue Ming Hsin; Jen Inn Chyi

doi:10.1049/el.2013.0430

InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

Han Chieh Ho, Zong Yan Gao, Heng Kuang Lin, Pei Chin Chiu, Yue Ming Hsin, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

Abstract

This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 μm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak g_m of 83 mS/mm.

Original language	English
Pages (from-to)	499-500
Number of pages	2
Journal	Electronics Letters
Volume	49
Issue number	7
DOIs	https://doi.org/10.1049/el.2013.0430
State	Published - 28 Mar 2013

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10.1049/el.2013.0430

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title = "InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment",

abstract = "This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 μm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.",

author = "Ho, {Han Chieh} and Gao, {Zong Yan} and Lin, {Heng Kuang} and Chiu, {Pei Chin} and Hsin, {Yue Ming} and Chyi, {Jen Inn}",

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T1 - InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

AU - Ho, Han Chieh

AU - Gao, Zong Yan

AU - Lin, Heng Kuang

AU - Chiu, Pei Chin

AU - Hsin, Yue Ming

AU - Chyi, Jen Inn

PY - 2013/3/28

Y1 - 2013/3/28

N2 - This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 μm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.

AB - This reported work investigates InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment. The study found that hydrogen plasma treatment can effectively shift threshold voltage from 0.47 to 0 V. A 0.2 μm gate-length device exhibited DC performances of a maximum drain current of 61 mA/mm, and a peak gm of 83 mS/mm.

UR - http://www.scopus.com/inward/record.url?scp=84877738131&partnerID=8YFLogxK

U2 - 10.1049/el.2013.0430

DO - 10.1049/el.2013.0430

M3 - 期刊論文

AN - SCOPUS:84877738131

SN - 0013-5194

VL - 49

SP - 499

EP - 500

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

InGaSb/AlSb p-channel HFETs with hydrogen plasma treatment

Abstract

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