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InGaP/GaAs DHBTs with composite collectors for power amplifiers
Y. M. Hsin
, C. H. Lin
, C. C. Fan
, S. T. Su
, M. H.T. Yang
, J. C.H. Huang
, K. C. Lin
Department of Electrical Engineering
Optical Sciences Center
Research output
:
Contribution to conference
›
Paper
›
peer-review
2
Scopus citations
Overview
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Keyphrases
Gallium Arsenide
100%
InGaP
100%
Double Heterojunction Bipolar Transistor
100%
Power Amplifier
100%
Composite Collector
100%
On-resistance
40%
GaAs Material
40%
Heterojunction Bipolar Transistors
20%
Current Gain
20%
Performance Improvement
20%
Wireless Communication
20%
Breakdown Voltage
20%
Gummel Plot
20%
Wide Bandgap
20%
High Breakdown Field
20%
Transit Time
20%
Transistor Performance
20%
GaAs HBT
20%
Knee Voltage
20%
High Electron Mobility
20%
Narrow Gap
20%
Emitter Region
20%
Engineering
Gallium Arsenide
100%
Heterojunctions
100%
Bipolar Transistor
100%
Power Amplifier
100%
Band Gap
33%
Current Gain
16%
Wireless Communication
16%
Breakdown Voltage
16%
Breakdown Field
16%
Collector Junction
16%
Material Science
Gallium Arsenide
100%
Heterojunction
100%
Bipolar Transistor
100%
Composite Material
100%
Amplifier
100%
Electron Mobility
16%