Abstract
InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collector has been proposed, simulated and fabricated to obtain the suitable heterojunction bipolar transistor (HBT) performance for power amplifiers in wireless communication. The composite collector combines both wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, InGaP material provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage; GaAs material provides high electron mobility and thus is able to be used to reduce on-resistance and transit time. Three InGaP/GaAs HBTs with different structures in collector have been grown, fabricated and characterized. The Gummel plots from simulation and measurement for the proposed DHBT show the negligible difference in current gains, which is due to the identical structures in base/emitter regions and effectively reduced conduction spike in base-collector junction. Overall, the DHBT with composite collector remains the advantages of DHBT with improved performance in on-resistance and knee voltage.
| Original language | English |
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| Pages | 208-211 |
| Number of pages | 4 |
| State | Published - 2001 |
| Event | 2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan Duration: 14 May 2001 → 18 May 2001 |
Conference
| Conference | 2001 International Conference on Indium Phosphide and Related Materials |
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| Country/Territory | Japan |
| City | Nara |
| Period | 14/05/01 → 18/05/01 |