InGaN-GaN MQW LEDs with current blocking layer formed by selective activation

Chia Ming Lee, Chang Cheng Chuo, Yu Chuan Liu, I. Ling Chen, Jen Inn Chyi

Research output: Contribution to journalLetterpeer-review

16 Scopus citations

Abstract

Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current was injected underneath the opaque p-pad.

Original languageEnglish
Pages (from-to)384-386
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number6
DOIs
StatePublished - Jun 2004

Keywords

  • Current blocking layer
  • GaN
  • Light-emitting diodes (LEDs)
  • Selective activation

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