InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy

Shu Han Chen, Sheng Yu Wang, Rei Jay Hsieh, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This letter investigates the dc characteristics of a double heterojunction bipolar transistor (DHBT) with a compressively strained InGaAsSb base, which is grown by solid-source molecular beam epitaxy. The novel InP/InGaAsSb HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower VCE offset voltage, and a junction ideality factor closer to unity than the conventional InP/InGaAs composite collector DHBT. These characteristics are attributed to the transistor's type-I B/E junction and type-II base/collector junction, which facilitates carrier transport for low power, high current density, and high-speed operation.

Original languageEnglish
Pages (from-to)679-681
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number8
DOIs
StatePublished - Aug 2007

Keywords

  • Heterojunction bipolar transistors (HBTs)
  • InP/InGaAsSb
  • Molecular beam epitaxy (MBE)

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