@article{f296f28c0f6745f7b2853a962eacec9e,
title = "InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth",
abstract = "The optical properties of InGaAsN QW grown on AlGaAsGaAs cladding layers were investigated. Al contamination in the quantum well due to the memory effect is responsible for the degradation of optical quality. We propose a growth method to reduce the Al contamination by growth interruption and dimethylhydrazine passivation. This approach improves the optical properties as well as simplifies the growth processes significantly as compared to the reported methods.",
author = "Chiu, {Pei Chin} and Yeh, {Nien Tze} and Hong, {Chao Chi} and Hsieh, {Tung Po} and Tsai, {Yao Tsong} and Ho, {Wen Jeng} and Chyi, {Jen Inn}",
note = "Funding Information: The authors would like to thank Dr. C.-C. Lin, Mr. K.-F. Huang, and Miss M.-L. Kou for their assistance in and fruitful discussion on epitaxial growth and device characterization. The support of National Science Council of R.O.C. under Contract No. 93-2215-E-008-009, the Center for Optical Science at National Central University, and National Nano Device Laboratories is greatly appreciated. ",
year = "2005",
month = aug,
day = "29",
doi = "10.1063/1.2037857",
language = "???core.languages.en_GB???",
volume = "87",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "9",
}