InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth

Pei Chin Chiu, Nien Tze Yeh, Chao Chi Hong, Tung Po Hsieh, Yao Tsong Tsai, Wen Jeng Ho, Jen Inn Chyi

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The optical properties of InGaAsN QW grown on AlGaAsGaAs cladding layers were investigated. Al contamination in the quantum well due to the memory effect is responsible for the degradation of optical quality. We propose a growth method to reduce the Al contamination by growth interruption and dimethylhydrazine passivation. This approach improves the optical properties as well as simplifies the growth processes significantly as compared to the reported methods.

Original languageEnglish
Article number091115
JournalApplied Physics Letters
Issue number9
StatePublished - 29 Aug 2005


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