InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth

Nien Tze Yeh; Pei Chin Chiu; Yao Tsong Tsai; Chao Chi Hong; Tung Po Hsieh; Wen Jeng Ho; Jen Inn Chyi

doi:10.1109/ICIPRM.2005.1517505

InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth

Nien Tze Yeh, Pei Chin Chiu, Yao Tsong Tsai, Chao Chi Hong, Tung Po Hsieh, Wen Jeng Ho, Jen Inn Chyi

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers have been investigated. Al contamination in the quantum well due to memory effect should be the root cause for the degradation of optical quality. We not only use proposed two-step growth but demonstrate a new method for reducing the Al contamination by growth interruption with DMHy. This approach shows good optical properties as well as two-step growth and more economic compared to the reported ones.

Original language	English
Title of host publication	2005 International Conference on Indium Phosphide and Related Materials
Pages	374-377
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2005.1517505
State	Published - 2005
Event	2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom Duration: 8 May 2005 → 12 May 2005

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume	2005
ISSN (Print)	1092-8669

Conference

Conference	2005 International Conference on Indium Phosphide and Related Materials
Country/Territory	United Kingdom
City	Glasgow, Scotland
Period	8/05/05 → 12/05/05

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10.1109/ICIPRM.2005.1517505

Cite this

Yeh, N. T., Chiu, P. C., Tsai, Y. T., Hong, C. C., Hsieh, T. P., Ho, W. J., & Chyi, J. I. (2005). InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth. In 2005 International Conference on Indium Phosphide and Related Materials (pp. 374-377). Article 1517505 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005). https://doi.org/10.1109/ICIPRM.2005.1517505

@inproceedings{d9a9ebe9e6bb44ec9506b31b7cef2462,

title = "InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth",

abstract = "The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers have been investigated. Al contamination in the quantum well due to memory effect should be the root cause for the degradation of optical quality. We not only use proposed two-step growth but demonstrate a new method for reducing the Al contamination by growth interruption with DMHy. This approach shows good optical properties as well as two-step growth and more economic compared to the reported ones.",

author = "Yeh, {Nien Tze} and Chiu, {Pei Chin} and Tsai, {Yao Tsong} and Hong, {Chao Chi} and Hsieh, {Tung Po} and Ho, {Wen Jeng} and Chyi, {Jen Inn}",

year = "2005",

doi = "10.1109/ICIPRM.2005.1517505",

language = "???core.languages.en_GB???",

isbn = "0780388917",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "374--377",

booktitle = "2005 International Conference on Indium Phosphide and Related Materials",

note = "2005 International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",

}

Yeh, NT, Chiu, PC, Tsai, YT, Hong, CC, Hsieh, TP, Ho, WJ & Chyi, JI 2005, InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth. in 2005 International Conference on Indium Phosphide and Related Materials., 1517505, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, vol. 2005, pp. 374-377, 2005 International Conference on Indium Phosphide and Related Materials, Glasgow, Scotland, United Kingdom, 8/05/05. https://doi.org/10.1109/ICIPRM.2005.1517505

InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth. / Yeh, Nien Tze; Chiu, Pei Chin; Tsai, Yao Tsong et al.
2005 International Conference on Indium Phosphide and Related Materials. 2005. p. 374-377 1517505 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth

AU - Yeh, Nien Tze

AU - Chiu, Pei Chin

AU - Tsai, Yao Tsong

AU - Hong, Chao Chi

AU - Hsieh, Tung Po

AU - Ho, Wen Jeng

AU - Chyi, Jen Inn

PY - 2005

Y1 - 2005

N2 - The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers have been investigated. Al contamination in the quantum well due to memory effect should be the root cause for the degradation of optical quality. We not only use proposed two-step growth but demonstrate a new method for reducing the Al contamination by growth interruption with DMHy. This approach shows good optical properties as well as two-step growth and more economic compared to the reported ones.

AB - The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers have been investigated. Al contamination in the quantum well due to memory effect should be the root cause for the degradation of optical quality. We not only use proposed two-step growth but demonstrate a new method for reducing the Al contamination by growth interruption with DMHy. This approach shows good optical properties as well as two-step growth and more economic compared to the reported ones.

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U2 - 10.1109/ICIPRM.2005.1517505

DO - 10.1109/ICIPRM.2005.1517505

M3 - 會議論文篇章

AN - SCOPUS:33747388699

SN - 0780388917

SN - 9780780388918

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 374

EP - 377

BT - 2005 International Conference on Indium Phosphide and Related Materials

T2 - 2005 International Conference on Indium Phosphide and Related Materials

Y2 - 8 May 2005 through 12 May 2005

ER -

InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth

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