InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking

Shu Han Chen, Meng Lin Lee, Po Han Chen, Sheng Yu Wang, Ming Yuan Tseng, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

InGaAs/InP double heterojunction bipolar transistor with low offset voltage and low collector current blocking effect have been obtained using a combination of InGaAs spacers at the BE and BC junctions, and a highly doped n-type InP layer in the collector region. It is found that increasing the doping concentration of the n+-InP layer is more effective in lowering current blocking effect than increasing the InGaAs BC spacer thickness. Increasing base doping concentration is shown to be effective as well.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
Subtitle of host publicationPhotonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages433
Number of pages1
ISBN (Electronic)0780377664
DOIs
StatePublished - 2003
Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
Duration: 15 Dec 200319 Dec 2003

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume2

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
Country/TerritoryTaiwan
CityTaipei
Period15/12/0319/12/03

Fingerprint

Dive into the research topics of 'InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking'. Together they form a unique fingerprint.

Cite this