Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

L. J. Chen; S. L. Cheng; H. M. Luo; H. Y. Huang; Y. C. Peng; B. Y. Tsui; C. J. Tsai; S. S. Guo

Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

L. J. Chen, S. L. Cheng, H. M. Luo, H. Y. Huang, Y. C. Peng, B. Y. Tsui, C. J. Tsai, S. S. Guo

Department of Chemical and Materials Engineering

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi₂ and TiSi₂ films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.

Original language	English
Pages	256-259
Number of pages	4
State	Published - 1998
Event	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998

Conference

Conference	Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
City	Beijing, China
Period	21/10/98 → 23/10/98

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title = "Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si",

abstract = "The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi2 and TiSi2 films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.",

author = "Chen, {L. J.} and Cheng, {S. L.} and Luo, {H. M.} and Huang, {H. Y.} and Peng, {Y. C.} and Tsui, {B. Y.} and Tsai, {C. J.} and Guo, {S. S.}",

year = "1998",

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pages = "256--259",

note = "Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 21-10-1998 Through 23-10-1998",

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TY - CONF

T1 - Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

AU - Chen, L. J.

AU - Cheng, S. L.

AU - Luo, H. M.

AU - Huang, H. Y.

AU - Peng, Y. C.

AU - Tsui, B. Y.

AU - Tsai, C. J.

AU - Guo, S. S.

PY - 1998

Y1 - 1998

N2 - The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi2 and TiSi2 films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.

AB - The influences of stress on the growth of Ti and Ni silicides thin films on (001)Si have been investigated. Compressive stress present in the silicon substrate was found to retard significantly the growth of Ti and Ni silicide thin films. On the other hand, the tensile stress present in the silicon substrate was found to promote the formation of Ti and Ni silicides. For Ti and Ni on stressed (001)Si substrates after rapid thermal annealing (RTA), the thicknesses of TiSi2 and TiSi2 films were found to decrease and increase with the compressive and tensile stress level, respectively. The results indicated that the compressive stress hinders the migration of Si through the metal/Si interface, so that the growth of silicide is retarded. In contrast, the tensile stress promotes the Si diffusion to facilitate the formation of silicide thin films.

UR - http://www.scopus.com/inward/record.url?scp=0032226794&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0032226794

SP - 256

EP - 259

T2 - Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 21 October 1998 through 23 October 1998

ER -

Influences of stress on the growth of Ti and Ni silicide thin films on (001)Si

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