Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

Ying Tsan Tang; Der San Chuu; Kao Chin Lin

doi:10.1016/j.ssc.2010.10.007

Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

Ying Tsan Tang, Der San Chuu, Kao Chin Lin

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electronphonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency. This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage. The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n=0) and the first phonon sideband (n=1). These anomalies are consistent with the experimental observations in transport experiments.

Original language	English
Pages (from-to)	87-92
Number of pages	6
Journal	Solid State Communications
Volume	151
Issue number	1
DOIs	https://doi.org/10.1016/j.ssc.2010.10.007
State	Published - Jan 2011

Keywords

C. Electronic transport
C. Electronphonon interactions
C. Phonon-assisted tunneling

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10.1016/j.ssc.2010.10.007

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title = "Influence of phonon-associated tunneling rate on transport through a single-molecule transistor",

abstract = "We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electronphonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency. This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage. The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n=0) and the first phonon sideband (n=1). These anomalies are consistent with the experimental observations in transport experiments.",

keywords = "C. Electronic transport, C. Electronphonon interactions, C. Phonon-assisted tunneling",

author = "Tang, {Ying Tsan} and Chuu, {Der San} and Lin, {Kao Chin}",

note = "Funding Information: Finally, the authors would like to acknowledge valuable discussion with Prof. M. F. Lin, the team leader of the graphene group in the Department of Physics at NCKU, and Dr. Carlo Pagano at Institute of High Frequency and Semiconductor System Technologies in TU Berlin, and we are thankful for the support of the NSC-DAAD Sandwich Program under the grant number 96-2911-I-009-025-2 and the National Science Council, Taiwan under the grant number NSC 97-2112-M-009 -004 , NSC 97-2112-M-110-001-MY2 .",

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T1 - Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

AU - Tang, Ying Tsan

AU - Chuu, Der San

AU - Lin, Kao Chin

N1 - Funding Information: Finally, the authors would like to acknowledge valuable discussion with Prof. M. F. Lin, the team leader of the graphene group in the Department of Physics at NCKU, and Dr. Carlo Pagano at Institute of High Frequency and Semiconductor System Technologies in TU Berlin, and we are thankful for the support of the NSC-DAAD Sandwich Program under the grant number 96-2911-I-009-025-2 and the National Science Council, Taiwan under the grant number NSC 97-2112-M-009 -004 , NSC 97-2112-M-110-001-MY2 .

PY - 2011/1

Y1 - 2011/1

N2 - We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electronphonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency. This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage. The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n=0) and the first phonon sideband (n=1). These anomalies are consistent with the experimental observations in transport experiments.

AB - We study the electronic transport through a single-molecule transistor (SMT) by considering the phonon-associated tunneling rate. We find that the electronphonon interaction (EPI) changes the constant conductivities of the leads into a multi-channel structure of single vibration frequency. This interference of the multi-channel tunneling process results in a bias-dependent tunneling rate and obscures the conductance peaks at large bias voltage. The bias-dependent tunneling rate further causes a remarkable conductivity gap between the chemical potential of the leads (n=0) and the first phonon sideband (n=1). These anomalies are consistent with the experimental observations in transport experiments.

KW - C. Electronic transport

KW - C. Electronphonon interactions

KW - C. Phonon-assisted tunneling

UR - http://www.scopus.com/inward/record.url?scp=78649450222&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2010.10.007

DO - 10.1016/j.ssc.2010.10.007

M3 - 期刊論文

AN - SCOPUS:78649450222

SN - 0038-1098

VL - 151

SP - 87

EP - 92

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Influence of phonon-associated tunneling rate on transport through a single-molecule transistor

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Keywords

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