Influence of hydrogen on the properties of Al and Ga-doped ZnO films at room temperature

Meng Chi Li, Chien Cheng Kuo, Ssu Hsiang Peng, Sheng Hui Chen, Cheng Chung Lee

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Low resistivity and high transmittance of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) transparent conductive thin films have been achieved by use of pulsed dc magnetron sputtering in a hydrogen environment at room temperature. The addition of hydrogen to the sputtering gas can reduce the resistivity of the films and improve their electrical properties compared to those prepared without H2, because the hydrogen acts a shallow donor. The average transmittance was over 85% in the visible region, and the lowest resistivity of the AZO and GZO films was 4.01 × 10-4 (Ω-cm) and 4:39 × 10-4 (Ω -cm), respectively.

Original languageEnglish
Pages (from-to)C197-C200
JournalApplied Optics
Volume50
Issue number9
DOIs
StatePublished - 20 Mar 2011

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